Publication detail

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

ŠIKULA, J. SEDLÁKOVÁ, V. SITA, Z.

Original Title

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

English Title

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

Type

conference paper

Language

en

Original Abstract

The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.

English abstract

The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.

RIV year

2006

Released

01.01.2006

Publisher

Ing. Zdeněk Novotný CSc.

Location

Brno, ČR

ISBN

80-214-3246-2

Book

EDS '06 IMAPS CS International Conference Proceedings

Pages from

154

Pages to

163

Pages count

10

BibTex


@inproceedings{BUT24160,
  author="Josef {Šikula} and Vlasta {Sedláková} and Zdeněk {Sita}",
  title="Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors",
  annote="The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.",
  address="Ing. Zdeněk Novotný CSc.",
  booktitle="EDS '06 IMAPS CS International Conference Proceedings",
  chapter="24160",
  institution="Ing. Zdeněk Novotný CSc.",
  year="2006",
  month="january",
  pages="154",
  publisher="Ing. Zdeněk Novotný CSc.",
  type="conference paper"
}