Publication detail

Sputtered SiNx, AlN and SiC as passivation and ARC layers

HÉGR, O. BOUŠEK, J. FOŘT, T. PORUBA, A. BAŘINKA, R.

Original Title

Sputtered SiNx, AlN and SiC as passivation and ARC layers

Type

conference paper

Language

English

Original Abstract

Different types of mono-crystalline solar cell surfaces are presented in this article. Reactively sputtered layers of different compositions (SiNx, AlN and SiC) are used for passivation coatings on both cells sides. Sputtering technology gives the possibility to replace high-temperature processes which decrease surface and bulk defect density. Consequently, sputtering results in higher solar cell efficiency. Surface and bulk recombination parameters were measured by means of microwave photoconductivity decay (MW-PCD).

Keywords

silicon solar cell, surface passivation, sputtering, antireflection coating, silicon carbide, silicon nitride, aluminum nitride

Authors

HÉGR, O.; BOUŠEK, J.; FOŘT, T.; PORUBA, A.; BAŘINKA, R.

RIV year

2007

Released

20. 9. 2007

Publisher

Ing. Zdeněk Novotný CSc., Brno

Location

Brno

ISBN

978-80-214-3470-7

Book

Electronic Devices and Systems EDS´07

Edition number

1

Pages from

164

Pages to

167

Pages count

4

BibTex

@inproceedings{BUT24054,
  author="Ondřej {Hégr} and Jaroslav {Boušek} and Tomáš {Fořt} and Aleš {Poruba} and Radim {Bařinka}",
  title="Sputtered SiNx, AlN and SiC as passivation and ARC layers",
  booktitle="Electronic Devices and Systems EDS´07",
  year="2007",
  number="1",
  pages="4",
  publisher="Ing. Zdeněk Novotný CSc., Brno",
  address="Brno",
  isbn="978-80-214-3470-7"
}