Publication detail

Characterization of Nonlinear On-Chip Capacitors

SUTORÝ, T. KOLKA, Z.

Original Title

Characterization of Nonlinear On-Chip Capacitors

English Title

Characterization of Nonlinear On-Chip Capacitors

Type

conference paper

Language

en

Original Abstract

The paper deals with nonlinear on-chip capacitor characterization. A modification of CBCM (Charge-Based Capacitance Measurements) has been proposed. The CBCM method was originally developed for linear interconnect-capacitance measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. The main advantage of the method is high resolution although it is based on equipment found in any average laboratory. A test-chip implementing the method was designed and manufactured in 0.35m CMOS process. Verification against known capacitances proved the method correctness and accuracy. The test-chip was successfully used for MOSFET gate-capacitance characterization.

English abstract

The paper deals with nonlinear on-chip capacitor characterization. A modification of CBCM (Charge-Based Capacitance Measurements) has been proposed. The CBCM method was originally developed for linear interconnect-capacitance measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. The main advantage of the method is high resolution although it is based on equipment found in any average laboratory. A test-chip implementing the method was designed and manufactured in 0.35m CMOS process. Verification against known capacitances proved the method correctness and accuracy. The test-chip was successfully used for MOSFET gate-capacitance characterization.

Keywords

Microelectronics, CBCM, testing

RIV year

2007

Released

01.04.2007

Publisher

Brno University of Technology

Location

Brno

ISBN

1-4244-0821-0

Book

Proceedings of the 17th International Conference Radioelektronka 2007

Pages from

51

Pages to

55

Pages count

5

Documents

BibTex


@inproceedings{BUT23787,
  author="Tomáš {Sutorý} and Zdeněk {Kolka}",
  title="Characterization of Nonlinear On-Chip Capacitors",
  annote="The paper deals with nonlinear on-chip capacitor characterization. A modification of CBCM (Charge-Based Capacitance Measurements) has been proposed. The CBCM method was originally developed for linear interconnect-capacitance measurements. The proposed modification uses two DC swept sources to measure the whole nonlinear Q-v characteristic in both polarities without the necessity to switch the measured object. The main advantage of the method is high resolution although it is based on equipment found in any average laboratory. A test-chip implementing the method was designed and manufactured in 0.35m CMOS process. Verification against known capacitances proved the method correctness and accuracy. The test-chip was successfully used for MOSFET gate-capacitance characterization.",
  address="Brno University of Technology",
  booktitle="Proceedings of the 17th International Conference Radioelektronka 2007",
  chapter="23787",
  institution="Brno University of Technology",
  year="2007",
  month="april",
  pages="51",
  publisher="Brno University of Technology",
  type="conference paper"
}