Publication detail

RTS and 1/f Noise in Submicron MOSFETs

ŠIKULA, J. PAVELKA, J. HAVRÁNEK, J. HLÁVKA, J. TACANO, M. TOITA, M.

Original Title

RTS and 1/f Noise in Submicron MOSFETs

English Title

RTS and 1/f Noise in Submicron MOSFETs

Type

conference paper

Language

en

Original Abstract

RTS noise was measured as a function of electric field and temperature. From the analysis of gate insulating layer current the energy band diagram of all structure was determined.

English abstract

RTS noise was measured as a function of electric field and temperature. From the analysis of gate insulating layer current the energy band diagram of all structure was determined.

Keywords

RTS noise, 1/f noise, MOSFET

RIV year

2007

Released

10.09.2007

Publisher

AIP

Location

Tokio

ISBN

978-0-7354-0432-8

Book

Proc. ICNF 2007 AIP Conf. Proc. Vol. 922

Pages from

71

Pages to

74

Pages count

4

BibTex


@inproceedings{BUT23035,
  author="Josef {Šikula} and Jan {Pavelka} and Jan {Havránek} and Jan {Hlávka} and Munecazu {Tacano} and Masato {Toita}",
  title="RTS and 1/f Noise in Submicron MOSFETs",
  annote="RTS noise was measured as a function of electric field and temperature. From the analysis of gate insulating layer current the energy band diagram of all structure was determined.",
  address="AIP",
  booktitle="Proc. ICNF 2007 AIP Conf. Proc. Vol. 922",
  chapter="23035",
  institution="AIP",
  year="2007",
  month="september",
  pages="71--74",
  publisher="AIP",
  type="conference paper"
}