Publication detail

Analysis of Fermi Level Position the CdTe Single Crystal

ANDREEV, A.

Original Title

Analysis of Fermi Level Position the CdTe Single Crystal

English Title

Analysis of Fermi Level Position the CdTe Single Crystal

Type

conference paper

Language

en

Original Abstract

The CdTe single crystal radiation detector resistance was measured during long time inter-val with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the tempera-ture became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing

English abstract

The CdTe single crystal radiation detector resistance was measured during long time inter-val with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the tempera-ture became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing

Keywords

Fermi Level Position, CdTe detectors, Hole concentration, hole mobility

RIV year

2007

Released

01.01.2007

Publisher

Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno

Location

Brno, Czech Republic

ISBN

978-80-214-3409-7

Book

Proceedings of the 13th Conference Student EEICT 2007, Volume 3

Pages from

215

Pages to

219

Pages count

5

BibTex


@inproceedings{BUT22567,
  author="Alexey {Andreev}",
  title="Analysis of Fermi Level Position the CdTe Single Crystal",
  annote="The CdTe single crystal radiation detector resistance was measured during long time inter-val with applied voltage U=1V. Effect of temperature changes on the hole concentration, the hole mobility and the Fermi level position was studied this way. 
The hole concentration, the hole mobility and the Fermi level position as a functions of time were calculated. Analysis of the resistance show that the hole concentration is almost constant with temperature changing. It begins to change appreciably just after the tempera-ture became constant. The resistance changing is influenced mainly by the hole mobility changing. As temperature is constant, the resistance changing is influenced only by the hole concentration changing",
  address="Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno",
  booktitle="Proceedings of the 13th Conference Student EEICT 2007, Volume 3",
  chapter="22567",
  institution="Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno",
  year="2007",
  month="january",
  pages="215",
  publisher="Ing. Zdeněk NovotnýCsc, Ondračkova 105 Brno",
  type="conference paper"
}