Publication detail

PD Processing

HAVLÍČEK, T.

Original Title

PD Processing

English Title

PD Processing

Type

conference paper

Language

en

Original Abstract

Partial Discharge (PD) investigation is very important in technology of high voltage devices such as transformers, rotary machines, electronic drives, etc. It helps us to predict an increased risk of breakdown. The monitoring of PD occurrence is necessary in semiconductor devices working at voltages above 600 V like VDMOS MOSFET, IGBT and special bipolar transistors, for example. Also in case of driving integrated circuits where the applied voltage is low, but conducting routes are not a long distance apart the distance between conducting routes is rather short, risk of occurrence of PD occurrence is relatively high. This work is focused on PC supported multi channel Partial Discharge measurement.

English abstract

Partial Discharge (PD) investigation is very important in technology of high voltage devices such as transformers, rotary machines, electronic drives, etc. It helps us to predict an increased risk of breakdown. The monitoring of PD occurrence is necessary in semiconductor devices working at voltages above 600 V like VDMOS MOSFET, IGBT and special bipolar transistors, for example. Also in case of driving integrated circuits where the applied voltage is low, but conducting routes are not a long distance apart the distance between conducting routes is rather short, risk of occurrence of PD occurrence is relatively high. This work is focused on PC supported multi channel Partial Discharge measurement.

Keywords

Partial Discharge (PD), monitoring of PD occurrence, PC supported measurement,

RIV year

2007

Released

01.01.2007

Publisher

Z. Novotny

Location

Brno

ISBN

978-80-214-3410-3

Book

Proceedings of the 13th Conference STUDENT EEICT 2007 Volume 4

Edition number

1

Pages from

299

Pages to

302

Pages count

4

BibTex


@inproceedings{BUT22555,
  author="Tomáš {Havlíček}",
  title="PD Processing",
  annote="Partial Discharge (PD) investigation is very important in technology of high voltage devices such as transformers, rotary machines, electronic drives, etc. It helps us to predict an increased risk of breakdown. The monitoring of PD occurrence is necessary in semiconductor devices working at voltages above 600 V like VDMOS MOSFET, IGBT and special bipolar transistors, for example. Also in case of driving integrated circuits where the applied voltage is low, but conducting routes are not a long distance apart the distance between conducting routes is rather short, risk of occurrence of PD occurrence is relatively high. This work is focused on PC supported multi channel Partial Discharge measurement.",
  address="Z. Novotny",
  booktitle="Proceedings of the 13th Conference STUDENT EEICT 2007 Volume 4",
  chapter="22555",
  institution="Z. Novotny",
  year="2007",
  month="january",
  pages="299",
  publisher="Z. Novotny",
  type="conference paper"
}