Publication detail

The Nanoscale Double-Gate MOSFET.

Richard Ficek, Michal Horák

Original Title

The Nanoscale Double-Gate MOSFET.

English Title

The Nanoscale Double-Gate MOSFET.

Type

conference paper

Language

en

Original Abstract

This paper directs attention to an analytically compact model for the nanoscale double-gate metal-oxide semiconductor field effect transistor based on McKelvey’s flux theory. The general goal is to present completed characteristics of Double-Gate MOSFET. The model is continuous above and below threshold and from linear to saturation regions. Most importantly, it describes nanoscale MOSFET from the diffusive to ballistic regimes. Paper involved simulations of current voltages characteristics dependent on its parameters, 3D model structure and exploring the limits.

English abstract

This paper directs attention to an analytically compact model for the nanoscale double-gate metal-oxide semiconductor field effect transistor based on McKelvey’s flux theory. The general goal is to present completed characteristics of Double-Gate MOSFET. The model is continuous above and below threshold and from linear to saturation regions. Most importantly, it describes nanoscale MOSFET from the diffusive to ballistic regimes. Paper involved simulations of current voltages characteristics dependent on its parameters, 3D model structure and exploring the limits.

Keywords

Double-Gate MOSFET

RIV year

2005

Released

23.09.2005

Publisher

Technological Institute of Chania

Location

Chania

ISBN

80-214-3042-7

Book

Intensive Training Programme in Electronic System Design

Pages from

158

Pages to

162

Pages count

5

BibTex


@inproceedings{BUT20917,
  author="Richard {Ficek} and Michal {Horák}",
  title="The Nanoscale Double-Gate MOSFET.",
  annote="This paper directs attention to an analytically compact model for the nanoscale double-gate metal-oxide semiconductor field effect transistor based on McKelvey’s flux theory. The general goal is to present completed characteristics of Double-Gate MOSFET. The model is continuous above and below threshold and from linear to saturation regions. Most importantly, it describes nanoscale MOSFET from the diffusive to ballistic regimes. Paper involved simulations of current voltages characteristics dependent on its parameters, 3D model structure and exploring the limits.

",
  address="Technological Institute of Chania",
  booktitle="Intensive Training Programme in Electronic System Design",
  chapter="20917",
  institution="Technological Institute of Chania",
  year="2005",
  month="september",
  pages="158",
  publisher="Technological Institute of Chania",
  type="conference paper"
}