Publication detail

Bipolar transistor structure electrical characterization

RECMAN M.

Original Title

Bipolar transistor structure electrical characterization

English Title

Bipolar transistor structure electrical characterization

Type

conference paper

Language

en

Original Abstract

The bipolar transistor model parameters extraction method based on device simulator generated electrical characteristics is presented. The forward active region electrical characteristics generated by device simulator DESSIS substitute for the measured ones. The methodology links the device simulator DESSIS and electrical simulator HSPICE and enables to extract parameter numerical values of HSPICE built-in bipolar transistor model. The individual steps to create bipolar transistor structure, generate corresponding mesh, simulate device structure, convert electrical data from DESSIS to HSPICE, extract model parameter values and evaluate the results are described.

English abstract

The bipolar transistor model parameters extraction method based on device simulator generated electrical characteristics is presented. The forward active region electrical characteristics generated by device simulator DESSIS substitute for the measured ones. The methodology links the device simulator DESSIS and electrical simulator HSPICE and enables to extract parameter numerical values of HSPICE built-in bipolar transistor model. The individual steps to create bipolar transistor structure, generate corresponding mesh, simulate device structure, convert electrical data from DESSIS to HSPICE, extract model parameter values and evaluate the results are described.

Keywords

device simulation, circuit simulation, model parameters extraction

RIV year

2005

Released

01.01.2005

Publisher

Nakl. Novotný

Location

Brno

ISBN

80-214-3042-7

Book

Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings

Pages from

63

Pages to

67

Pages count

5

BibTex


@inproceedings{BUT20416,
  author="Milan {Recman}",
  title="Bipolar transistor structure electrical characterization",
  annote="The bipolar transistor model parameters extraction method based on device simulator generated electrical characteristics is presented. The forward active region electrical characteristics generated by device simulator DESSIS substitute for the measured ones.  The methodology  links the device simulator DESSIS and electrical simulator HSPICE and  enables to extract parameter numerical values of HSPICE built-in bipolar transistor model.   The individual steps to create bipolar transistor structure, generate corresponding mesh, simulate device structure, convert electrical data from DESSIS to HSPICE, extract model parameter values and evaluate the results are described.",
  address="Nakl. Novotný",
  booktitle="Socrates Workshop 2005, Intensive Training Programme in Electronic System Design – Proceedings",
  chapter="20416",
  institution="Nakl. Novotný",
  year="2005",
  month="january",
  pages="63",
  publisher="Nakl. Novotný",
  type="conference paper"
}