Publication detail

Šum mikroplazmy v PN přechodu a její vliv na tvar VA charakteristiky

Original Title

Šum mikroplazmy v PN přechodu a její vliv na tvar VA charakteristiky

Czech Title

Šum mikroplazmy v PN přechodu a její vliv na tvar VA charakteristiky

Language

cs

Original Abstract

The occurence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogenous PN junction regions. The existence of such regions may lead to local avalanche breakdowns occuring in reverse-biased PN junctions at certain voltage. These local avalanche breakdowns are represented by two level current impuls noise and affect course of VA characteristics. VA characteristics can exhibit regions with negative differential resistance in certain conditions.

Czech abstract

The occurence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogenous PN junction regions. The existence of such regions may lead to local avalanche breakdowns occuring in reverse-biased PN junctions at certain voltage. These local avalanche breakdowns are represented by two level current impuls noise and affect course of VA characteristics. VA characteristics can exhibit regions with negative differential resistance in certain conditions.

BibTex


@inproceedings{BUT20224,
  author="Michal {Raška} and Pavel {Koktavý}",
  title="Šum mikroplazmy v PN přechodu a její vliv na tvar VA charakteristiky",
  annote="The occurence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogenous PN junction regions. The existence of such regions may lead to local avalanche breakdowns occuring in reverse-biased PN junctions at certain voltage. These local avalanche breakdowns are represented by two level current impuls noise and affect course of VA characteristics. VA characteristics can exhibit regions with negative differential resistance in certain conditions.",
  address="Západočeská universita v Plzni",
  booktitle="elektrotechnika a informatika 2006",
  chapter="20224",
  institution="Západočeská universita v Plzni",
  number="1",
  year="2006",
  month="october",
  pages="85",
  publisher="Západočeská universita v Plzni",
  type="conference paper"
}