Publication detail

Reactive magnetron sputtering silicon nitride layer for passivation of solar cells

HÉGR, O.

Original Title

Reactive magnetron sputtering silicon nitride layer for passivation of solar cells

English Title

Reactive magnetron sputtering silicon nitride layer for passivation of solar cells

Type

conference paper

Language

en

Original Abstract

In our work we deal with SiNX and SiO2 layers deposited by means of reactive magnetron sputtering on the different crystalline silicone surfaces. The aim of work is evaluation of both surface recombination and optical properties of this layers and their comparison with standard solar cells made by Solartec company (Czech republic). Silicon oxide layer (10 – 20 nm) created before silicon nitride layer (70 – 80nm) deposition leads to further decrease of surface defects. Reactive magnetron sputtering eliminate high-temperature stress in deposition process of silicon nitride and silicon dioxide. In this process is possible to obtain comparatively high deposition rate (even to 10 nm/min for SiNx).

English abstract

In our work we deal with SiNX and SiO2 layers deposited by means of reactive magnetron sputtering on the different crystalline silicone surfaces. The aim of work is evaluation of both surface recombination and optical properties of this layers and their comparison with standard solar cells made by Solartec company (Czech republic). Silicon oxide layer (10 – 20 nm) created before silicon nitride layer (70 – 80nm) deposition leads to further decrease of surface defects. Reactive magnetron sputtering eliminate high-temperature stress in deposition process of silicon nitride and silicon dioxide. In this process is possible to obtain comparatively high deposition rate (even to 10 nm/min for SiNx).

Keywords

solar cell, passivation layer, reactive magnetron sputtering, silicon nitride, silicon dioxide

RIV year

2006

Released

01.01.2006

Publisher

Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno

ISBN

80-214-3162-8

Book

Proceedings of the 12th Conference STUDENT EEICT 2006 Volume 3

Edition number

1

Pages from

171

Pages to

174

Pages count

4

BibTex


@inproceedings{BUT19634,
  author="Ondřej {Hégr}",
  title="Reactive magnetron sputtering silicon nitride layer for passivation of solar cells",
  annote="In our work we deal with SiNX and SiO2 layers deposited by means of reactive magnetron sputtering on the different crystalline silicone surfaces. The aim of work is evaluation of both surface recombination and optical properties of this layers and their comparison with standard solar cells made by Solartec company (Czech republic). Silicon oxide layer (10 – 20 nm) created before silicon nitride layer (70 – 80nm) deposition leads to further decrease of surface defects. Reactive magnetron sputtering eliminate high-temperature stress in deposition process of silicon nitride and silicon dioxide. In this process is possible to obtain comparatively high deposition rate (even to 10 nm/min for SiNx).",
  address="Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno",
  booktitle="Proceedings of the 12th Conference STUDENT EEICT 2006 Volume 3",
  chapter="19634",
  institution="Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno",
  number="1",
  year="2006",
  month="january",
  pages="171",
  publisher="Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno",
  type="conference paper"
}