Publication detail

Analysis of a Simple Model Contact Au-CdTe by detectors of Gamma Ray

Alexey Andreev, Jiri Zajacek

Original Title

Analysis of a Simple Model Contact Au-CdTe by detectors of Gamma Ray

English Title

Analysis of a Simple Model Contact Au-CdTe by detectors of Gamma Ray

Type

conference paper

Language

en

Original Abstract

The energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. The energy band diagram in the metal shows the position of the Fermi level. The energy band diagram in the semiconductor shows the bottom of the conducting band Ec, the valence band ceiling Ev, the Fermi level and impurity activation energy. A contact field arises in the area of CdTe-metal interface. It causes bending of the energy bands in the depleted zone of the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined.

English abstract

The energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. The energy band diagram in the metal shows the position of the Fermi level. The energy band diagram in the semiconductor shows the bottom of the conducting band Ec, the valence band ceiling Ev, the Fermi level and impurity activation energy. A contact field arises in the area of CdTe-metal interface. It causes bending of the energy bands in the depleted zone of the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined.

Keywords

Energy Band, Shottky barrier, Depleted Zone

Released

01.01.2006

Publisher

Markus Detert

Location

Germany

ISBN

3-934142-23-0

Book

ISSE 2006. 29th International Spring Seminar on Electronics Technology

Pages from

27

Pages to

30

Pages count

4

BibTex


@inproceedings{BUT18713,
  author="Alexey {Andreev} and Jiří {Zajaček}",
  title="Analysis of a Simple Model Contact Au-CdTe by detectors of Gamma Ray",
  annote="The energy band diagrams of the CdTe-metal interface have been modeled on the basis of the semiconductor parameters. The energy band diagram in the metal shows the position of the Fermi level. The energy band diagram in the semiconductor shows the bottom of the conducting band Ec, the valence band ceiling Ev, the Fermi level and impurity activation energy. A contact field arises in the area of CdTe-metal interface. It causes bending of the energy bands in the depleted zone of the semiconductor. A series of measurements of VA characteristics at various temperatures was carried out in the dark and the changes of the current function with temperature were determined.",
  address="Markus Detert",
  booktitle="ISSE 2006. 29th International Spring Seminar on Electronics Technology",
  chapter="18713",
  institution="Markus Detert",
  year="2006",
  month="january",
  pages="27",
  publisher="Markus Detert",
  type="conference paper"
}