Publication detail

1/f noise in submicron MOSFETs

HAVRÁNEK, J., SEDLÁK, P.

Original Title

1/f noise in submicron MOSFETs

English Title

1/f noise in submicron MOSFETs

Type

conference paper

Language

en

Original Abstract

The objectives of this paper are experimental investigations of the nature of the 1/f noise, if the source is mobile carrier number fluctuations or a fluctuation in the mobility. Experiments were performed in low frequency range, where the 1/f noise for submicron structures as MOSFETs and HEMTs is dominant. There are a low number of carriers in the active volume of those nanoscale devices; therefore it is supposed that 1/f noise will be dominant. Thus new valuable experimental results of noise spectral density and its relation like charge carriers mean free path, mobility, dependence on temperature and electric field inten-sity will be obtained.

English abstract

The objectives of this paper are experimental investigations of the nature of the 1/f noise, if the source is mobile carrier number fluctuations or a fluctuation in the mobility. Experiments were performed in low frequency range, where the 1/f noise for submicron structures as MOSFETs and HEMTs is dominant. There are a low number of carriers in the active volume of those nanoscale devices; therefore it is supposed that 1/f noise will be dominant. Thus new valuable experimental results of noise spectral density and its relation like charge carriers mean free path, mobility, dependence on temperature and electric field inten-sity will be obtained.

RIV year

2006

Released

01.04.2006

Publisher

Vienna Universtity of Technology

Location

Vienna

ISBN

3-902463-05-8

Book

Junior Scientist Conference

Pages from

121

Pages to

122

Pages count

2

BibTex


@inproceedings{BUT18420,
  author="Jan {Havránek} and Petr {Sedlák}",
  title="1/f noise in submicron MOSFETs",
  annote="The objectives of this paper are experimental investigations of the nature of the 1/f noise, if the source is mobile carrier number fluctuations or a fluctuation in the mobility.  Experiments were performed in low frequency range, where the 1/f noise for submicron structures as MOSFETs and HEMTs is dominant. There are a low number of carriers in the active volume of those nanoscale devices; therefore it is supposed that 1/f noise will be dominant. Thus new valuable experimental results of noise spectral density and its relation like charge carriers mean free path, mobility, dependence on temperature and electric field inten-sity will be obtained.",
  address="Vienna Universtity of Technology",
  booktitle="Junior Scientist Conference",
  chapter="18420",
  institution="Vienna Universtity of Technology",
  year="2006",
  month="april",
  pages="121",
  publisher="Vienna Universtity of Technology",
  type="conference paper"
}