Publication detail

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

TANIZAKI, H., YAMADA, M., PAVELKA, J.,

Original Title

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

Type

conference paper

Language

English

Original Abstract

Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.

Key words in English

GaN, scattering, mobility

Authors

TANIZAKI, H., YAMADA, M., PAVELKA, J.,

Released

1. 1. 2002

Publisher

Meisei Univeristy

Location

Tokio

Pages from

132

Pages to

135

Pages count

4

BibTex

@inproceedings{BUT16522,
  author="H. {Tanizaki} and M. {Yamada} and Jan {Pavelka} and Nobuhisa {Tanuma} and H. {Tanoue} and K. {Tomisawa} and Munecazu {Tacano}",
  title="Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport",
  booktitle="Proceedings of the 13th Symposium on Advanced Materials",
  year="2002",
  pages="4",
  publisher="Meisei Univeristy",
  address="Tokio"
}