Publication detail

RTS Noise in Submicron MOSFETs: Low and High Field Effects

TACANO, M., ŠIKULA, J., HLÁVKA, J., PAVELKA, J., SEDLÁKOVÁ, V.

Original Title

RTS Noise in Submicron MOSFETs: Low and High Field Effects

English Title

RTS Noise in Submicron MOSFETs: Low and High Field Effects

Type

conference paper

Language

en

Original Abstract

RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs

English abstract

RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs

RIV year

2005

Released

01.01.2005

Publisher

VUT

Location

Brno

ISBN

80-214-2990-9

Book

Proceedings of EDS'05 Electronic Devices and Systems IMAPS CS Int. Conf.

Pages from

XV

Pages count

8

BibTex


@inproceedings{BUT16510,
  author="Munecazu {Tacano} and Josef {Šikula} and Jan {Hlávka} and Jan {Pavelka} and Vlasta {Sedláková} and Sumihisa {Hashiguchi} and Masato {Toita}",
  title="RTS Noise in Submicron MOSFETs: Low and High Field Effects",
  annote="RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs",
  address="VUT",
  booktitle="Proceedings of EDS'05 Electronic Devices and Systems IMAPS CS Int. Conf.",
  chapter="16510",
  institution="VUT",
  year="2005",
  month="january",
  pages="XV",
  publisher="VUT",
  type="conference paper"
}