RTS Noise in Submicron MOSFETs: Low and High Field Effects

conference paper

English

RTS noise amplitude and capture and emission processes time constants are analysed as a function of gate and drain voltage / lateral electric field intensity in submicron MOSFETs

RTS noise, 1/f noise, MOSFET

TACANO, M., ŠIKULA, J., HLÁVKA, J., PAVELKA, J., SEDLÁKOVÁ, V.

2005

1. 1. 2005

VUT

Brno

80-214-2990-9

Proceedings of EDS'05 Electronic Devices and Systems IMAPS CS Int. Conf.

XV

8