Publication detail

Tantalum and Niobium Capacitors: Technology and Characteristic Parameters Comparison

GRILL, R.

Original Title

Tantalum and Niobium Capacitors: Technology and Characteristic Parameters Comparison

English Title

Tantalum and Niobium Capacitors: Technology and Characteristic Parameters Comparison

Type

conference paper

Language

en

Original Abstract

The comparison of technology, conductivity mechanisms, capacitance and their activation energies is performed for NbO and Ta capacitors. Va caracteristics in normal and reverse mode at room and elevated temperatures have been measured and MIS structure characteristics have been evaluated.

English abstract

The comparison of technology, conductivity mechanisms, capacitance and their activation energies is performed for NbO and Ta capacitors. Va caracteristics in normal and reverse mode at room and elevated temperatures have been measured and MIS structure characteristics have been evaluated.

RIV year

2005

Released

01.01.2005

Publisher

IMAPS Benelux

Location

Bruggy, Belgie

Pages from

540

Pages to

545

Pages count

6

BibTex


@inproceedings{BUT16509,
  author="Josef {Šikula} and Vlasta {Sedláková} and Jan {Hlávka} and Pavel {Höschel} and Roman {Grill} and Zdeněk {Sita} and Tomáš {Zedníček}",
  title="Tantalum and Niobium Capacitors: Technology and Characteristic Parameters Comparison",
  annote="The comparison of technology, conductivity mechanisms, capacitance and their activation energies is performed for NbO and Ta capacitors. Va caracteristics in normal and reverse mode at room and elevated temperatures have been measured and MIS structure characteristics have been evaluated.",
  address="IMAPS Benelux",
  booktitle="15th European Microelectronics and Packaging Conference Proceedings",
  chapter="16509",
  institution="IMAPS Benelux",
  year="2005",
  month="january",
  pages="540",
  publisher="IMAPS Benelux",
  type="conference paper"
}