Publication detail

Hooge Noise Parameter of GaN HFETs on SiC

TANUMA, N. PAVELKA, J. YAGI, S. OKUMURA, H. UEMURA, T. TACANO, M. HASHIGUCHI, S. ŠIKULA, J.

Original Title

Hooge Noise Parameter of GaN HFETs on SiC

English Title

Hooge Noise Parameter of GaN HFETs on SiC

Type

conference paper

Language

en

Original Abstract

Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5.

English abstract

Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5.

Keywords

GaN, HFET, noise

RIV year

2005

Released

01.01.2005

Publisher

University of Salamanca

Location

Salamanka, Španělsko

ISBN

0-7354-0267-1

Book

Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780

Pages from

343

Pages to

346

Pages count

4

BibTex


@inproceedings{BUT16500,
  author="Nobuhisa {Tanuma} and Jan {Pavelka} and Shuichi {Yagi} and Hajime {Okumura} and T. {Uemura} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Josef {Šikula}",
  title="Hooge Noise Parameter of GaN HFETs on SiC",
  annote="Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5.",
  address="University of Salamanca",
  booktitle="Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780",
  chapter="16500",
  institution="University of Salamanca",
  year="2005",
  month="january",
  pages="343",
  publisher="University of Salamanca",
  type="conference paper"
}