Publication detail

RTS in Submicron MOSFETs: High Field Effects

PAVELKA, J., SEDLÁKOVÁ, V., ŠIKULA, J., HAVRÁNEK, J., TACANO, M., HASHIGUCHI, S., TOITA, M.

Original Title

RTS in Submicron MOSFETs: High Field Effects

Type

conference paper

Language

English

Original Abstract

A systematic analysis of two level RTS signal was made to obtain information on capture and emission processes as a function of gate voltage, drain current and temperature for low and high lateral electric field.

Key words in English

RTS noise, high electric field, MOSFET, MIS structure

Authors

PAVELKA, J., SEDLÁKOVÁ, V., ŠIKULA, J., HAVRÁNEK, J., TACANO, M., HASHIGUCHI, S., TOITA, M.

RIV year

2005

Released

1. 1. 2005

Publisher

University of Salamanca

Location

Salamanka, Španělsko

ISBN

0-7354-0267-1

Book

Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780

Pages from

339

Pages to

342

Pages count

4

BibTex

@inproceedings{BUT16493,
  author="Jan {Pavelka} and Vlasta {Sedláková} and Josef {Šikula} and Jan {Havránek} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Masato {Toita}",
  title="RTS in Submicron MOSFETs: High Field Effects",
  booktitle="Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780",
  year="2005",
  pages="4",
  publisher="University of Salamanca",
  address="Salamanka, Španělsko",
  isbn="0-7354-0267-1"
}