Publication detail

Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors

ABUETWIRAT, I. LIEDERMANN, K.

Original Title

Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors

Type

presentation, poster

Language

English

Original Abstract

In this paper MIS (Metal-Insulator-Semiconductor) Ta2O5 capacitor has been studied in terms of dielectric relaxation with a low frequency dielectric spectroscopy. The results acquired for Ta2O5 show a relaxation peak in the temperature and frequency range available, 187 K – 385 K, 1 Hz – 10 MHz. The loss peak frequency follows the Arrhenius law dependence with the activation energy of 0.048 eV. In conductivity spectra, Ta2O5 film exhibits a steady–state value at low frequencies and a monotonous increase at high frequencies depending on temperature. The observed conductivity followed a slightly superlinear power law.

Keywords

thin oxide film; dielectric properties; Havriliak–Negami (HN) equation; electrical conductivity

Authors

ABUETWIRAT, I.; LIEDERMANN, K.

Released

29. 6. 2015

Publisher

Atlantis Press

Location

Bangkok, Thailand

Pages from

889

Pages to

891

Pages count

3

URL

https://www.atlantis-press.com/proceedings/cisia-15/22672

BibTex

@misc{BUT163658,
  author="Inas Faisel {Abuetwirat} and Karel {Liedermann}",
  title="Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors",
  year="2015",
  pages="889--891",
  publisher="Atlantis Press",
  address="Bangkok, Thailand",
  doi="https://doi.org/10.2991/cisia-15.2015.238",
  url="https://www.atlantis-press.com/proceedings/cisia-15/22672",
  note="presentation, poster"
}