Publication detail

Binary memory with orthogonal eigenspaces: from stable states to chaotic oscillations

PETRŽELA, J.

Original Title

Binary memory with orthogonal eigenspaces: from stable states to chaotic oscillations

English Title

Binary memory with orthogonal eigenspaces: from stable states to chaotic oscillations

Type

journal article in Web of Science

Language

en

Original Abstract

This short paper demonstrates numerically and experimentally observed transitions between the stable states, regular and chaotic oscillations in the case of state representations of binary memory transformed into the Jordan form. Math model of original memory describes simple anti-series connection of two resonant tunneling diodes (RTDs). Derived third-order dynamical system is analyzed with respect to global behavior and, consequently, implemented as lumped analog circuit with piecewise linear (PWL) vector field. Oscilloscope screenshots prove that chaotic motion of binary memory is robust.

English abstract

This short paper demonstrates numerically and experimentally observed transitions between the stable states, regular and chaotic oscillations in the case of state representations of binary memory transformed into the Jordan form. Math model of original memory describes simple anti-series connection of two resonant tunneling diodes (RTDs). Derived third-order dynamical system is analyzed with respect to global behavior and, consequently, implemented as lumped analog circuit with piecewise linear (PWL) vector field. Oscilloscope screenshots prove that chaotic motion of binary memory is robust.

Keywords

binary memory; chaos; piecewise linear; stable states; strange attractors

Released

26.03.2020

Publisher

Springer

Location

Francie

Pages from

1021

Pages to

1032

Pages count

12

URL

BibTex


@article{BUT163198,
  author="Jiří {Petržela}",
  title="Binary memory with orthogonal eigenspaces: from stable states to chaotic oscillations",
  annote="This short paper demonstrates numerically and experimentally observed transitions between the stable states, regular and chaotic oscillations in the case of state representations of binary memory transformed into the Jordan form. Math model of original memory describes simple anti-series connection of two resonant tunneling diodes (RTDs). Derived third-order dynamical system is analyzed with respect to global behavior and, consequently, implemented as lumped analog circuit with piecewise linear (PWL) vector field. Oscilloscope screenshots prove that chaotic motion of binary memory is robust.",
  address="Springer",
  chapter="163198",
  doi="10.1140/epjst/e2020-900242-1",
  howpublished="online",
  institution="Springer",
  number="1",
  volume="229",
  year="2020",
  month="march",
  pages="1021--1032",
  publisher="Springer",
  type="journal article in Web of Science"
}