Publication detail

Stochastic processes in MOSFET transistors

Jan Havránek, Martin Bláha

Original Title

Stochastic processes in MOSFET transistors

English Title

Stochastic processes in MOSFET transistors

Type

conference paper

Language

en

Original Abstract

Noise of electrical circuits is one of the the key parameters of today's communication systems. It limits the modulation quality of the information signal, and the cross-talk to adjacent channels. The noise spectroscopy in time and frequency domain is one of the promising methods to provide a non-destructive characterization of semiconductor materials and devices and also to determinate quality and reliability of researching devices. This applies to both active and passive components used in electrical circuits, i.e., bipolar, quantum dots and MOS structures, on one hand, and resistors and capacitors on the other. As a main diagnostic tool it is proposed to use low frequency current or voltage noise spectral density and theirs statistical distributions. In this paper, the most important noise sources generated in semiconductors and in their interfaces will be discussed, after that on MOSFET transistor to obtain proper noise model with all known noise sources.

English abstract

Noise of electrical circuits is one of the the key parameters of today's communication systems. It limits the modulation quality of the information signal, and the cross-talk to adjacent channels. The noise spectroscopy in time and frequency domain is one of the promising methods to provide a non-destructive characterization of semiconductor materials and devices and also to determinate quality and reliability of researching devices. This applies to both active and passive components used in electrical circuits, i.e., bipolar, quantum dots and MOS structures, on one hand, and resistors and capacitors on the other. As a main diagnostic tool it is proposed to use low frequency current or voltage noise spectral density and theirs statistical distributions. In this paper, the most important noise sources generated in semiconductors and in their interfaces will be discussed, after that on MOSFET transistor to obtain proper noise model with all known noise sources.

RIV year

2005

Released

03.11.2005

Location

Plzen

ISBN

80-7043-375-2

Book

Elektronika a Informatika 2005

Pages from

6

Pages to

9

Pages count

4

BibTex


@inproceedings{BUT15956,
  author="Jan {Havránek} and Martin {Bláha}",
  title="Stochastic processes in MOSFET transistors",
  annote="Noise of electrical circuits is one of the the key parameters of today's communication systems. It limits the modulation quality of the information signal, and the cross-talk to adjacent channels. 
The noise spectroscopy in time and frequency domain is one of the promising methods to provide a non-destructive characterization of semiconductor materials and devices and also to determinate quality and reliability of researching devices. This applies to both active and passive components used in electrical circuits, i.e., bipolar, quantum dots and MOS structures, on one hand, and resistors and capacitors on the other. As a main diagnostic tool it is proposed to use low frequency current or voltage noise spectral density and theirs statistical distributions. 
In this paper, the most important noise sources generated in semiconductors and in their interfaces will be discussed, after that on MOSFET transistor to obtain proper noise model with all known noise sources.
",
  booktitle="Elektronika a Informatika 2005",
  chapter="15956",
  year="2005",
  month="november",
  pages="6",
  type="conference paper"
}