Publication detail

Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

Lancaster, S. Andrews, AM. Stoeger-Pollach, M. Steiger-Thirsfeld, A. Groiss, H. Schrenk, W. Strasser, G. Detz, H.

Original Title

Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

English Title

Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

Type

journal article in Web of Science

Language

en

Original Abstract

Nanowires provide a platform for the integration of heterogeneous materials in III–V systems grown on Si. B x Ga 1−x As is an interesting material for strain applications, which has not yet been studied in nanowire form. The incorporation of boron in GaAs nanowires is investigated via DC-IV measurements. In transmission electron microscopy analysis a high concentration of boron is found at the nanowire edges, indicating surface segregation during growth. Nanowires grown under boron flux are found to exhibit Ohmic contacts and low contact resistances with p-type metallizations such as Au/Zn/Au or Cr/Au. Back-gated measurements confirmed the p-type behavior of such nanowires, indicating that boron is incorporated on antisite defects where it acts as a doubly-charged acceptor. This offers a new route for the inclusion of p-doped layers in GaAs-based nanowire heterostructures and the subsequent formation of Ohmic contacts.

English abstract

Nanowires provide a platform for the integration of heterogeneous materials in III–V systems grown on Si. B x Ga 1−x As is an interesting material for strain applications, which has not yet been studied in nanowire form. The incorporation of boron in GaAs nanowires is investigated via DC-IV measurements. In transmission electron microscopy analysis a high concentration of boron is found at the nanowire edges, indicating surface segregation during growth. Nanowires grown under boron flux are found to exhibit Ohmic contacts and low contact resistances with p-type metallizations such as Au/Zn/Au or Cr/Au. Back-gated measurements confirmed the p-type behavior of such nanowires, indicating that boron is incorporated on antisite defects where it acts as a doubly-charged acceptor. This offers a new route for the inclusion of p-doped layers in GaAs-based nanowire heterostructures and the subsequent formation of Ohmic contacts.

Keywords

B:GaAs, boron doping, molecular beam epitaxy, nanowires

Released

01.05.2019

Pages from

1800368

Pages to

1800368

Pages count

5

URL

Documents

BibTex


@article{BUT159148,
  author="Hermann {Detz}",
  title="Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires",
  annote="Nanowires provide a platform for the integration of heterogeneous materials in III–V systems grown on Si. B x Ga 1−x As is an interesting material for strain applications, which has not yet been studied in nanowire form. The incorporation of boron in GaAs nanowires is investigated via DC-IV measurements. In transmission electron microscopy analysis a high concentration of boron is found at the nanowire edges, indicating surface segregation during growth. Nanowires grown under boron flux are found to exhibit Ohmic contacts and low contact resistances with p-type metallizations such as Au/Zn/Au or Cr/Au. Back-gated measurements confirmed the p-type behavior of such nanowires, indicating that boron is incorporated on antisite defects where it acts as a doubly-charged acceptor. This offers a new route for the inclusion of p-doped layers in GaAs-based nanowire heterostructures and the subsequent formation of Ohmic contacts.",
  chapter="159148",
  doi="10.1002/pssb.201800368",
  howpublished="print",
  number="5",
  volume="256",
  year="2019",
  month="may",
  pages="1800368--1800368",
  type="journal article in Web of Science"
}