Publication detail

Local Instabilities In GaAsP Diode PN Junctions

KOKTAVÝ, P., KOKTAVÝ, B.

Original Title

Local Instabilities In GaAsP Diode PN Junctions

English Title

Local Instabilities In GaAsP Diode PN Junctions

Type

conference paper

Language

en

Original Abstract

Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bistable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.

English abstract

Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bistable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.

Keywords

Noise, PN junction, avalanche breakdown, microplasma

RIV year

2005

Released

01.01.2005

Publisher

American Institute of Physics

Location

Salamanca, Spain

ISBN

0-7354-0267-1

Book

Noise and Fluctuations, 18th conference on Noise and Fluctuations - ICNF 05

Pages from

393

Pages to

396

Pages count

4

BibTex


@inproceedings{BUT15272,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Local Instabilities In GaAsP Diode PN Junctions",
  annote="Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bistable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.",
  address="American Institute of Physics",
  booktitle="Noise and Fluctuations, 18th conference on Noise and Fluctuations - ICNF 05",
  chapter="15272",
  institution="American Institute of Physics",
  year="2005",
  month="january",
  pages="393",
  publisher="American Institute of Physics",
  type="conference paper"
}