Publication detail

Optical near-field investigations on GaAs/AlxGa1-XAs quantum dots

GRMELA, L. KALA, J. TOMÁNEK, P.

Original Title

Optical near-field investigations on GaAs/AlxGa1-XAs quantum dots

English Title

Optical near-field investigations on GaAs/AlxGa1-XAs quantum dots

Type

conference paper

Language

en

Original Abstract

The generation of the mid-infrared laser light in the tunnel-bounded quantum wells is observed. This phenomenon is linked together with inter-subband transitions of electrons during the intraband optical pumping. The inversion of population quantum wells is also possible during the interband optical or current pumping. This process is more convenient for practical applications. To investigate the optical properties of tunnel-bounded quantum-wells GaAs/AlxGa1-xAs with intersubband transitions of electrons the time and spatial resolved scanning near-field optical microscope is used.

English abstract

The generation of the mid-infrared laser light in the tunnel-bounded quantum wells is observed. This phenomenon is linked together with inter-subband transitions of electrons during the intraband optical pumping. The inversion of population quantum wells is also possible during the interband optical or current pumping. This process is more convenient for practical applications. To investigate the optical properties of tunnel-bounded quantum-wells GaAs/AlxGa1-xAs with intersubband transitions of electrons the time and spatial resolved scanning near-field optical microscope is used.

Keywords

near-field optics, semiconductor structure, quantum well, absorption, time delay

RIV year

2005

Released

09.06.2005

Publisher

Zeithamlová Milena, Ing. - Agentura Action M

Location

Prague

ISBN

80-86742-08-3

Book

Photonics Prague 2005

Pages from

163

Pages to

164

Pages count

2

BibTex


@inproceedings{BUT15230,
  author="Lubomír {Grmela} and Jaroslav {Kala} and Pavel {Tománek}",
  title="Optical near-field investigations on GaAs/AlxGa1-XAs quantum dots",
  annote="The generation of the mid-infrared laser light in the tunnel-bounded quantum wells is observed. This phenomenon is linked together with inter-subband transitions of electrons during the intraband optical pumping. The inversion of population quantum wells is also possible during the interband optical or current pumping. This process is more convenient for practical applications. To investigate the optical properties of tunnel-bounded quantum-wells GaAs/AlxGa1-xAs with intersubband transitions of electrons the time and spatial resolved scanning near-field optical microscope is used.",
  address="Zeithamlová Milena, Ing. - Agentura Action M",
  booktitle="Photonics Prague 2005",
  chapter="15230",
  institution="Zeithamlová Milena, Ing. - Agentura Action M",
  year="2005",
  month="june",
  pages="163--164",
  publisher="Zeithamlová Milena, Ing. - Agentura Action M",
  type="conference paper"
}