Publication detail

A Compact Model of the Nanoscale Double-Gate MOSFET.

Richard Ficek, Michal Horák

Original Title

A Compact Model of the Nanoscale Double-Gate MOSFET.

English Title

A Compact Model of the Nanoscale Double-Gate MOSFET.

Type

conference paper

Language

en

Original Abstract

We would like to present a simple, compact model for the nanoscale DG MOSFET using a flux method originally introduced by McKelvey. McKelvey’s flux method captures the essential physics of carrier transport in transistors and has been previously used for thin-base diodes and bipolar transistors. The device displays high transconductance and near-ideal subthreshold swing and the two gates provide good electrostatic integrity which minimizes drain induced barrier lowering (DIBL) and threshold variation with channel length. This work is based on paper from Dr. Lundstrom and Dr. Rahman.

English abstract

We would like to present a simple, compact model for the nanoscale DG MOSFET using a flux method originally introduced by McKelvey. McKelvey’s flux method captures the essential physics of carrier transport in transistors and has been previously used for thin-base diodes and bipolar transistors. The device displays high transconductance and near-ideal subthreshold swing and the two gates provide good electrostatic integrity which minimizes drain induced barrier lowering (DIBL) and threshold variation with channel length. This work is based on paper from Dr. Lundstrom and Dr. Rahman.

Keywords

Double-Gate MOSFET, drain-induced barrier lowering, backscattering coefficient.

RIV year

2005

Released

16.09.2005

Publisher

Vysoké učení technické v Brně, Antonínská 548/1

Location

Brno

ISBN

80-214-2990-9

Book

EDS'05 IMAPS CS INTERNATIONAL CONFERENCE PROCEEDINGS

Pages from

11

Pages to

15

Pages count

5

BibTex


@inproceedings{BUT15191,
  author="Richard {Ficek} and Michal {Horák}",
  title="A Compact Model of the Nanoscale Double-Gate MOSFET.",
  annote="We would like to present a simple, compact model for the nanoscale DG MOSFET using a flux method originally introduced by McKelvey. McKelvey’s flux method captures the essential physics of carrier transport in transistors and has been
previously used for thin-base diodes and bipolar transistors. The device displays high transconductance and near-ideal subthreshold swing and the two gates provide good electrostatic integrity which minimizes drain induced barrier lowering (DIBL) and threshold variation with channel length. This work is based on paper from Dr. Lundstrom and Dr. Rahman.",
  address="Vysoké učení technické v Brně, Antonínská 548/1",
  booktitle="EDS'05 IMAPS CS INTERNATIONAL CONFERENCE PROCEEDINGS",
  chapter="15191",
  institution="Vysoké učení technické v Brně, Antonínská 548/1",
  year="2005",
  month="september",
  pages="11",
  publisher="Vysoké učení technické v Brně, Antonínská 548/1",
  type="conference paper"
}