Publication detail

Ambipolar remote graphene doping by low-energy electron beam irradiation

STARÁ, V. PROCHÁZKA, P. MAREČEK, D. ŠIKOLA, T. ČECHAL, J.

Original Title

Ambipolar remote graphene doping by low-energy electron beam irradiation

Type

journal article in Web of Science

Language

English

Original Abstract

We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved

Keywords

Graphene, Field effect transistors, graphene transistors

Authors

STARÁ, V.; PROCHÁZKA, P.; MAREČEK, D.; ŠIKOLA, T.; ČECHAL, J.

Released

7. 10. 2018

ISBN

2040-3372

Periodical

Nanoscale

Year of study

10

Number

37

State

United Kingdom of Great Britain and Northern Ireland

Pages from

17520

Pages to

17524

Pages count

5

BibTex

@article{BUT150300,
  author="Veronika {Stará} and Pavel {Procházka} and David {Mareček} and Tomáš {Šikola} and Jan {Čechal}",
  title="Ambipolar remote graphene doping by low-energy electron beam irradiation",
  journal="Nanoscale",
  year="2018",
  volume="10",
  number="37",
  pages="17520--17524",
  doi="10.1039/c8nr06483k",
  issn="2040-3372"
}