Publication detail

Memristor Emulator Circuit using multiple output OTA and its experimental results

KUMAR RANJAN, R. KUMAR SHARMA, P. SURENDRA, S. RAJ, N. KUMARI, B. KHATEB, F.

Original Title

Memristor Emulator Circuit using multiple output OTA and its experimental results

English Title

Memristor Emulator Circuit using multiple output OTA and its experimental results

Type

journal article in Scopus

Language

en

Original Abstract

A charge controlled memristor emulator circuit based on one kind of active device (Operational Transconductance Amplifier) using CMOS technology is introduced in this paper. The proposed circuit can be configured in both incremental and decremental types by using a simple switch. The memristor behavior can be electronically tuned by adjusting the transconductance of the OTAs. By changing the value of the capacitor, the pinched hysteresis loop observed in the current versus voltage plane can be held at higher frequencies. The proposed emulator circuit functions well up to 500 kHz. The experiment has been performed using commercially available OTA ICs (CA3080). The experimental demonstration has been carried out for 10 kHz, 20 kHz and 120 kHz. A simple high Pass filter is explained in both configuration to demonstrate the functionality of the proposed memristor emulator. The proposed circuit has been simulated in PSPICE using 0.5 µm CMOS parameter. The simulated and experimental results validate the theoretical proposition.

English abstract

A charge controlled memristor emulator circuit based on one kind of active device (Operational Transconductance Amplifier) using CMOS technology is introduced in this paper. The proposed circuit can be configured in both incremental and decremental types by using a simple switch. The memristor behavior can be electronically tuned by adjusting the transconductance of the OTAs. By changing the value of the capacitor, the pinched hysteresis loop observed in the current versus voltage plane can be held at higher frequencies. The proposed emulator circuit functions well up to 500 kHz. The experiment has been performed using commercially available OTA ICs (CA3080). The experimental demonstration has been carried out for 10 kHz, 20 kHz and 120 kHz. A simple high Pass filter is explained in both configuration to demonstrate the functionality of the proposed memristor emulator. The proposed circuit has been simulated in PSPICE using 0.5 µm CMOS parameter. The simulated and experimental results validate the theoretical proposition.

Keywords

Memristor emulator; pinched hysteresis loop; Operational Transconductance Amplifier; current mode circuits.

Released

04.02.2019

Publisher

WORLD SCIENTIFIC PUBL CO PTE LTD

Location

Singapore

Pages from

1

Pages to

10

Pages count

10

URL

BibTex


@article{BUT150289,
  author="Rajeev {Kumar Ranjan} and Pankaj {Kumar Sharma} and Sagar {Surendra} and Niranjan {Raj} and Bharti {Kumari} and Fabian {Khateb}",
  title="Memristor Emulator Circuit using multiple output OTA and its experimental results",
  annote="A charge controlled memristor emulator circuit based on one kind of active device (Operational Transconductance Amplifier) using CMOS technology is introduced in this paper. The proposed circuit can be configured in both incremental and decremental types by using a simple switch. The memristor behavior can be electronically tuned by adjusting the transconductance of the OTAs. By changing the value of the capacitor, the pinched hysteresis loop observed in the current versus voltage plane can be held at higher frequencies. The proposed emulator circuit functions well up to 500 kHz. The experiment has been performed using commercially available OTA ICs (CA3080). The experimental demonstration has been carried out for 10 kHz, 20 kHz and 120 kHz.  A simple high Pass filter is explained in both configuration to demonstrate the functionality of the proposed memristor emulator. The proposed circuit has been simulated in PSPICE using 0.5 µm CMOS parameter. The simulated and experimental results validate the theoretical proposition.",
  address="WORLD SCIENTIFIC PUBL CO PTE LTD",
  chapter="150289",
  doi="10.1142/S0218126619501664",
  howpublished="print",
  institution="WORLD SCIENTIFIC PUBL CO PTE LTD",
  number=", IF: 0.939",
  year="2019",
  month="february",
  pages="1--10",
  publisher="WORLD SCIENTIFIC PUBL CO PTE LTD",
  type="journal article in Scopus"
}