Publication detail

About v-i Pinched Hysteresis of Some Non-Memristive Systems

BIOLEK, D. BIOLEK, Z. BIOLKOVÁ, V. ASCOLI, A. TETZLAFF, R.

Original Title

About v-i Pinched Hysteresis of Some Non-Memristive Systems

Type

journal article in Web of Science

Language

English

Original Abstract

A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.

Keywords

pinched hysteresis; memristor; inverse memristor; constitutive relation; inductor; capacitor

Authors

BIOLEK, D.; BIOLEK, Z.; BIOLKOVÁ, V.; ASCOLI, A.; TETZLAFF, R.

Released

24. 9. 2018

Publisher

Hindawi

Location

USA

ISBN

1024-123X

Periodical

MATHEMATICAL PROBLEMS IN ENGINEERING

Year of study

2018

Number

1

State

United States of America

Pages from

1

Pages to

10

Pages count

10

URL

http://dx.doi.org/10.1155/2018/1747865

Full text in the Digital Library

http://hdl.handle.net/11012/193102

BibTex

@article{BUT150098,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková} and Alon {Ascoli} and Ronald {Tetzlaff}",
  title="About v-i Pinched Hysteresis of Some Non-Memristive Systems",
  journal="MATHEMATICAL PROBLEMS IN ENGINEERING",
  year="2018",
  volume="2018",
  number="1",
  pages="1--10",
  doi="10.1155/2018/1747865",
  issn="1024-123X",
  url="http://dx.doi.org/10.1155/2018/1747865"
}