Publication detail

Influence of charged centers on transport properties of thin film electroluminescent devices

AHMED, M. TOMÁNEK, P.

Original Title

Influence of charged centers on transport properties of thin film electroluminescent devices

English Title

Influence of charged centers on transport properties of thin film electroluminescent devices

Type

conference paper

Language

en

Original Abstract

Thin film electroluminescent devices (TFELD) have become of great interest since they offer a possible means of achieving a high-resolution, light-weight, compact video display panel for computer terminals or television screens [1].The realization of a full colour TFELD represented a problem due to the poor luminance of blue emission. To overcome this problem, the mechanism of electroluminescence (EL) should be investigated in detail to find out the way to improve the device properties. The basic mechanism of electroluminescence is based on high-field acceleration of electrons to optical energies at which luminescent centers, intentionally introduced into the host material, could be impact excited. So, the transport process of electrons under an electric field is the key process since it determines the electrons energy. This process is the result of interaction between the acceleration of electrons by the electric field and the scattering of electrons by some kinds of scattering mechanism, including phonon scattering, impurity scattering, etc. Charged centers exist in the phosphor layer of common thin film electroluminescent devices. In this article, the electron scattering process by these centers is studied through phase shift analysis. The scattering rates in different cases are obtained and compared with other important scattering processes. The electron transport process is simulated by means of the Monte Carlo method. Quantitative results about the influence of charged centers on electron kinetic energy are reported.

English abstract

Thin film electroluminescent devices (TFELD) have become of great interest since they offer a possible means of achieving a high-resolution, light-weight, compact video display panel for computer terminals or television screens [1].The realization of a full colour TFELD represented a problem due to the poor luminance of blue emission. To overcome this problem, the mechanism of electroluminescence (EL) should be investigated in detail to find out the way to improve the device properties. The basic mechanism of electroluminescence is based on high-field acceleration of electrons to optical energies at which luminescent centers, intentionally introduced into the host material, could be impact excited. So, the transport process of electrons under an electric field is the key process since it determines the electrons energy. This process is the result of interaction between the acceleration of electrons by the electric field and the scattering of electrons by some kinds of scattering mechanism, including phonon scattering, impurity scattering, etc. Charged centers exist in the phosphor layer of common thin film electroluminescent devices. In this article, the electron scattering process by these centers is studied through phase shift analysis. The scattering rates in different cases are obtained and compared with other important scattering processes. The electron transport process is simulated by means of the Monte Carlo method. Quantitative results about the influence of charged centers on electron kinetic energy are reported.

Keywords

thin-film electroluminescent device, phosphors, charged center, transport properties, near-field investigations

RIV year

2005

Released

08.06.2005

Publisher

Zeithamlová Milena, Ing. - Agentura Action M

Location

Prague

ISBN

80-86742-08-3

Book

Photonics Prague 2005

Pages from

145

Pages to

146

Pages count

2

BibTex


@inproceedings{BUT14801,
  author="Mustafa M. Abdalla {Ahmed} and Pavel {Tománek}",
  title="Influence of charged centers on transport properties of thin film electroluminescent devices",
  annote="Thin film electroluminescent devices (TFELD) have become of great interest since they offer a possible means of achieving a high-resolution, light-weight, compact video display panel for computer terminals or television screens [1].The realization of a full colour TFELD represented a problem due to the poor luminance of blue emission. To overcome this problem, the mechanism of electroluminescence (EL) should be investigated in detail to find out the way to improve the device properties. The basic mechanism of electroluminescence is based on high-field acceleration of electrons to optical energies at which luminescent centers, intentionally introduced into the host material, could be impact excited. So, the transport process of electrons under an electric field is the key process since it determines the electrons energy. This process is the result of interaction between the acceleration of electrons by the electric field and the scattering of electrons by some kinds of scattering mechanism, including phonon scattering, impurity scattering, etc.
Charged centers exist in the phosphor layer of common thin film electroluminescent devices. In this article, the electron scattering process by these centers is studied through phase shift analysis. The scattering rates in different cases are obtained and compared with other important scattering processes. The electron transport process is simulated by means of the Monte Carlo method. Quantitative results about the influence of charged centers on electron kinetic energy are reported.
",
  address="Zeithamlová Milena, Ing. - Agentura Action M",
  booktitle="Photonics Prague 2005",
  chapter="14801",
  institution="Zeithamlová Milena, Ing. - Agentura Action M",
  year="2005",
  month="june",
  pages="145--146",
  publisher="Zeithamlová Milena, Ing. - Agentura Action M",
  type="conference paper"
}