Publication detail

Morphological structure of solar cells based on silicon and gallium arsenide after ion etching

PAPEŽ, N.

Original Title

Morphological structure of solar cells based on silicon and gallium arsenide after ion etching

Type

conference paper

Language

English

Original Abstract

Study deals with the investigation of the surface after ion etching on two types of solar cells -- based on widely available polycrystalline silicon and on durable gallium arsenide for use in more demanding environments. Solar cell morphology was compared using an electron microscope together with an Energy Dispersive X-ray detector to show distribution ratios of elements. Atomic force microscopy was used to accurately describe the heights and roughness structure. Raman spectroscopy to study of vibrational properties and the stress investigations.

Keywords

RIE, GaAs, Si, ion bombardment, EDX, SEM, AFM

Authors

PAPEŽ, N.

Released

26. 4. 2018

Location

Brno

ISBN

978-80-214-5614-3

Book

Proceedings of the 24th Conference STUDENT EEICT 2018

Edition number

1

Pages from

513

Pages to

517

Pages count

5

URL

http://www.feec.vutbr.cz/EEICT/archiv/sborniky/EEICT_2018_sbornik.pdf

BibTex

@inproceedings{BUT147353,
  author="Nikola {Papež}",
  title="Morphological structure of solar cells based on silicon and gallium arsenide after ion etching",
  booktitle="Proceedings of the 24th Conference STUDENT EEICT 2018",
  year="2018",
  number="1",
  pages="513--517",
  address="Brno",
  isbn="978-80-214-5614-3",
  url="http://www.feec.vutbr.cz/EEICT/archiv/sborniky/EEICT_2018_sbornik.pdf"
}