Publication detail

Low Frequency in submicron MOSFET

Martin Blaha

Original Title

Low Frequency in submicron MOSFET

English Title

Low Frequency in submicron MOSFET

Type

conference paper

Language

en

Original Abstract

This work discusses about Low-Frequenci Noise in the Metal-Oxide Semiconductor (MOS) system. Is describe the current-voltage and noise characteristic of an ultrahin oxide capacitor. In the concluding chapter is describe Impact of gate oxide breakdown on the noise of MOSFETs

English abstract

This work discusses about Low-Frequenci Noise in the Metal-Oxide Semiconductor (MOS) system. Is describe the current-voltage and noise characteristic of an ultrahin oxide capacitor. In the concluding chapter is describe Impact of gate oxide breakdown on the noise of MOSFETs

Keywords

MOSFET, RTS noise, capacitance.

RIV year

2005

Released

28.04.2005

Location

Brno

ISBN

80-214-2889-9

Book

Student eeict 2005

Pages from

198

Pages to

201

Pages count

4

BibTex


@inproceedings{BUT14556,
  author="Martin {Bláha}",
  title="Low Frequency in submicron MOSFET",
  annote="This work discusses about Low-Frequenci Noise in the Metal-Oxide Semiconductor (MOS) system. Is describe  the current-voltage and noise characteristic of an ultrahin oxide capacitor. In the concluding chapter is describe Impact of gate oxide breakdown on the noise of MOSFETs",
  booktitle="Student eeict 2005",
  chapter="14556",
  year="2005",
  month="april",
  pages="198",
  type="conference paper"
}