Publication detail

RTS noise in submicron MOSFET

Martin Blaha

Original Title

RTS noise in submicron MOSFET

Type

conference paper

Language

English

Original Abstract

In the present paper, Im show processing of RTS noise in submicron MOSFET. The measure data from MOSFET tranzistor we process in program Easy Plot. From shape of curve we obtain time t1, t2 and t0. From measure date make programm Easy Plot histogram, RTS noise spectra density and FFT. This measure and elaborated data help us with be under way near physical process in MOSFET tranzistor.

Keywords

RTS, MOSFET, FFT, noise spectra density

Authors

Martin Blaha

RIV year

2004

Released

12. 11. 2004

Location

Brno

ISBN

80-7355024-5

Book

New trends in physics

Pages from

12

Pages to

15

Pages count

4

BibTex

@inproceedings{BUT14555,
  author="Martin {Bláha}",
  title="RTS noise in submicron MOSFET",
  booktitle="New trends in physics",
  year="2004",
  pages="4",
  address="Brno",
  isbn="80-7355024-5"
}