Publication detail

A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

MOJROVÁ, B. CHU, H. PETER, C. PREIS, P. LOSSEN, J. MIHAILETCHI, V. KOPECEK, R.

Original Title

A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

English Title

A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack

Type

journal article in Web of Science

Language

en

Original Abstract

In this study we investigated the passivation quality of boron doped emitters by varying the composition of SiO2/SiNX stack layers. For this purpose, n-PERT (passivated emitter, rear totally-diffused) solar cells with boron doped front side emitter and phosphorous doped back-surface-field (BSF), as well as symmetrical boron doped structures, were fabricated on 6-inch n-type wafers.

English abstract

In this study we investigated the passivation quality of boron doped emitters by varying the composition of SiO2/SiNX stack layers. For this purpose, n-PERT (passivated emitter, rear totally-diffused) solar cells with boron doped front side emitter and phosphorous doped back-surface-field (BSF), as well as symmetrical boron doped structures, were fabricated on 6-inch n-type wafers.

Keywords

solar cell, n-type, passivation, boron emitter, NAOS

Released

01.09.2017

Pages from

288

Pages to

294

Pages count

952

BibTex


@article{BUT141006,
  author="Barbora {Mojrová} and Haifeng {Chu} and Christop {Peter} and Pirmin {Preis} and Jan {Lossen} and Valentin {Mihailetchi} and Radovan {Kopecek}",
  title="A comparison study of boron emitter passivation by silicon oxide and a PECVD silicon nitride stack",
  annote="In  this  study  we  investigated  the  passivation  quality  of  boron  doped  emitters  by  varying  the  composition  of  SiO2/SiNX  stack  layers.  For  this  purpose, n-PERT  (passivated  emitter,  rear  totally-diffused)  solar  cells  with  boron  doped  front  side  emitter  and  phosphorous  doped  back-surface-field  (BSF),  as  well  as  symmetrical  boron  doped  structures,  were  fabricated  on  6-inch  n-type wafers.",
  chapter="141006",
  doi="10.1016/j.egypro.2017.09.301",
  howpublished="online",
  number="124",
  year="2017",
  month="september",
  pages="288--294",
  type="journal article in Web of Science"
}