Publication detail

Low-voltage Fully Differential Difference Transconductance Amplifier

KHATEB, F. KUMNGERN, M. KULEJ, T. KLEDROWETZ, V.

Original Title

Low-voltage Fully Differential Difference Transconductance Amplifier

Type

journal article in Web of Science

Language

English

Original Abstract

A new complementary metal–oxide–semiconductor (CMOS) structure for fully differential difference transconductance amplifier (FDDTA) is presented in this study. Thanks to using the non-conventional quasi-floating-gate (QFG) technique the circuit is capable to work under low-voltage supply of 0.6 V with extended input voltage range and with class AB output stages. The QFG multiple-input metal–oxide–semiconductor transistor is used to reduce the count of the differential pairs that needed to realise the FDDTA with simple CMOS structure. The static power consumption of the proposed FDDTA is 40 uW. The FDDTA was designed in Cadence platform using 0.18 um CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC). As an example of applications a three-stage quadrature oscillator and fifth-order elliptic low-pass filter are presented to confirm the attractive features of the proposed CMOS structure of the FDDTA.

Keywords

Fully differential difference transconductance amplifier; Low-voltage low-power CMOS; Quasi-floating-gate technique.

Authors

KHATEB, F.; KUMNGERN, M.; KULEJ, T.; KLEDROWETZ, V.

Released

26. 1. 2018

Publisher

INST ENGINEERING TECHNOLOGY-IET

Location

ENGLAND

ISBN

1751-858X

Periodical

IET Circuits, Devices and Systems

Year of study

12

Number

1, IF: 1.395

State

United Kingdom of Great Britain and Northern Ireland

Pages from

73

Pages to

81

Pages count

9

URL

http://dx.doi.org/10.1049/iet-cds.2017.0057

BibTex

@article{BUT136110,
  author="Fabian {Khateb} and Montree {Kumngern} and Tomasz {Kulej} and Vilém {Kledrowetz}",
  title="Low-voltage Fully Differential Difference Transconductance Amplifier",
  journal="IET Circuits, Devices and Systems",
  year="2018",
  volume="12",
  number="1, IF: 1.395",
  pages="73--81",
  doi="10.1049/iet-cds.2017.0057",
  issn="1751-858X",
  url="http://dx.doi.org/10.1049/iet-cds.2017.0057"
}