Publication detail

Tantalum Capacitor as a MIS Structure: Transport Characteristic Temperature Dependencies

KUPAROWITZ, M. KUPAROWITZ, T.

Original Title

Tantalum Capacitor as a MIS Structure: Transport Characteristic Temperature Dependencies

Type

conference paper

Language

English

Original Abstract

Temperature dependencies of a leakage current in normal mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal-insulator-semiconductor (MIS) heterostructure. The measurement was performed in temperature range from 105 to 155°C. Ohmic conductivity increases exponentially with increasing temperature with activation energy 0.94 eV. Tunneling voltage parameter and tunneling energy barrier decreases with increasing temperature, reaching values 0.45 to 0.26 eV.

Keywords

antalum capacitor, MIS structure, I-V characteristics, tunneling energy barrier, activation energy

Authors

KUPAROWITZ, M.; KUPAROWITZ, T.

Released

27. 4. 2017

Publisher

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Location

Brno

ISBN

9788021454965

Book

EEICT proceedings of the 23rd conference

Pages from

645

Pages to

649

Pages count

5

URL

http://www.utee.feec.vutbr.cz/eeict/2017/EEICT%202017-sborn%C3%ADk-komplet.pdf

BibTex

@inproceedings{BUT135410,
  author="Martin {Velísek} and Tomáš {Kuparowitz}",
  title="Tantalum Capacitor as a MIS Structure: Transport Characteristic Temperature Dependencies",
  booktitle="EEICT proceedings of the 23rd conference",
  year="2017",
  pages="645--649",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních 
technologií",
  address="Brno",
  isbn="9788021454965",
  url="http://www.utee.feec.vutbr.cz/eeict/2017/EEICT%202017-sborn%C3%ADk-komplet.pdf"
}