Publication detail

Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

BIOLEK, D. BIOLEK, Z. BIOLKOVÁ, V.

Original Title

Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

English Title

Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

Type

journal article in Web of Science

Language

en

Original Abstract

The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.

English abstract

The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.

Keywords

memristors; hysteresis; PSM; ideal memristors; memcapacitors; meminductors; differentiable constitutive relation; pinched hysteresis loop; sinusoidal signal; integer power; fingerprint; parameter versus state map

Released

30.09.2016

Publisher

IET, The Institution of Engineering and Technology

Location

London, UK

Pages from

1669

Pages to

1670

Pages count

2

URL

BibTex


@article{BUT129543,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková}",
  title="Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors",
  annote="The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.",
  address="IET, The Institution of Engineering and Technology",
  chapter="129543",
  doi="10.1049/el.2016.2138",
  howpublished="online",
  institution="IET, The Institution of Engineering and Technology",
  number="20",
  volume="52",
  year="2016",
  month="september",
  pages="1669--1670",
  publisher="IET, The Institution of Engineering and Technology",
  type="journal article in Web of Science"
}