Publication detail

Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

BIOLEK, Z. BIOLEK, D. BIOLKOVÁ, V.

Original Title

Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors

Type

journal article in Web of Science

Language

English

Original Abstract

The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.

Keywords

memristors; hysteresis; PSM; ideal memristors; memcapacitors; meminductors; differentiable constitutive relation; pinched hysteresis loop; sinusoidal signal; integer power; fingerprint; parameter versus state map

Authors

BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.

Released

30. 9. 2016

Publisher

IET, The Institution of Engineering and Technology

Location

London, UK

ISBN

0013-5194

Periodical

Electronics Letters

Year of study

52

Number

20

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1669

Pages to

1670

Pages count

2

URL

https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2138

Full text in the Digital Library

http://hdl.handle.net/11012/203148

BibTex

@article{BUT129543,
  author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková}",
  title="Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors",
  journal="Electronics Letters",
  year="2016",
  volume="52",
  number="20",
  pages="1669--1670",
  doi="10.1049/el.2016.2138",
  issn="0013-5194",
  url="https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2138"
}