Publication detail

A Fully Balanced Four-Terminal Floating Nullor for Ultra-Low Voltage Analog Filter Design

KUMNGERN, M. KHATEB, F. KULEJ, T.

Original Title

A Fully Balanced Four-Terminal Floating Nullor for Ultra-Low Voltage Analog Filter Design

Type

journal article in Web of Science

Language

English

Original Abstract

This paper presents a new CMOS structure for a fully balanced four-terminal floating nullor (FBFTFN) which is suitable for ultra-low-voltage and low-power applications. This structure employs a bulk-driven quasi-floating-gate (BD-QFG) MOS transistor technique to provide the capability of ultra-low voltage, low-power operations as well as extended input voltage range. The functionality of the proposed circuits is demonstrated through simulations using SPICE and TSMC 0.18 um n-well CMOS technology with supply voltage of 0.5 V and dissipation power of 9.4 uW. To confirm the attractive features of the proposed circuit, the fully balanced filters such as band-pass Sallen-Key filter, voltage-mode universal biquadratic filter and current-mode sixth-order low-pass filter using proposed BD-QFG FBFTFN as active elements have been designed.

Keywords

Bulk-driven quasi-floating-gate (BD-QFG) technique, four-terminal floating nullor (FTFN), fully balanced four-terminal floating nullor (FBFTFN), low-voltage and low-power circuits.

Authors

KUMNGERN, M.; KHATEB, F.; KULEJ, T.

Released

13. 1. 2017

Publisher

INST ENGINEERING TECHNOLOGY-IET

Location

ENGLAND

ISBN

1751-858X

Periodical

IET Circuits, Devices and Systems

Year of study

2017 (11)

Number

2, IF: 1.092

State

United Kingdom of Great Britain and Northern Ireland

Pages from

173

Pages to

182

Pages count

10

URL

BibTex

@article{BUT129041,
  author="Montree {Kumngern} and Fabian {Khateb} and Tomasz {Kulej}",
  title="A Fully Balanced Four-Terminal Floating Nullor for Ultra-Low Voltage Analog Filter Design",
  journal="IET Circuits, Devices and Systems",
  year="2017",
  volume="2017 (11)",
  number="2, IF: 1.092",
  pages="173--182",
  doi="10.1049/iet-cds.2016.0212",
  issn="1751-858X",
  url="http://dx.doi.org/10.1049/iet-cds.2016.0212"
}