Publication detail

ULTRA LOW POWER TUNABLE TRANSCONDUCTOR

BAY ABO DABBOUS, S.

Original Title

ULTRA LOW POWER TUNABLE TRANSCONDUCTOR

Type

conference paper

Language

English

Original Abstract

This paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its application to implement Gm-C filter. The CMOS structure of the Gm is performed using bulk-driven (BD) MOST technique, thus it can operate with extremely low voltage supply of ±0.3 V using 0.18 μm CMOS process. Moreover, it consumes ultra-LP about 4.9 μW. The simple topology, proper operating range, and tunability make this transconductor attractive. The transconductor and the Gm-C filter have been examined using simulation program Pspice.

Keywords

Bulk Driven MOST, low power low voltage, transconductor

Authors

BAY ABO DABBOUS, S.

Released

28. 4. 2016

Location

Brno

ISBN

978-80-214-5350-0

Book

Proceedings of the 22st Conference STUDENT EEICT 2016

Pages from

695

Pages to

699

Pages count

5

BibTex

@inproceedings{BUT125430,
  author="Salma {Bay Abo Dabbous}",
  title="ULTRA LOW POWER TUNABLE TRANSCONDUCTOR",
  booktitle="Proceedings of the 22st Conference STUDENT EEICT 2016",
  year="2016",
  pages="695--699",
  address="Brno",
  isbn="978-80-214-5350-0"
}