Publication detail

Local Avalanche Breakdowns in Semiconductor GaAsP Diodes

KOKTAVÝ, P., ŠIKULA, J., ŠTOURAČ, L.

Original Title

Local Avalanche Breakdowns in Semiconductor GaAsP Diodes

Type

conference paper

Language

English

Original Abstract

Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.

Keywords

Avalanche breakdowns, PN junction, Microplasma noise, GaAsP diodes

Authors

KOKTAVÝ, P., ŠIKULA, J., ŠTOURAČ, L.

RIV year

2004

Released

1. 1. 2004

Publisher

University of Nis

Location

Nis, Serbia & Montenegro

ISBN

0-7803-8166-1

Book

MIEL 04

Pages from

58

Pages to

61

Pages count

4

BibTex

@inproceedings{BUT12142,
  author="Pavel {Koktavý} and Josef {Šikula} and Ladislav {Štourač}",
  title="Local Avalanche Breakdowns in Semiconductor GaAsP Diodes",
  booktitle="MIEL 04",
  year="2004",
  pages="4",
  publisher="University of Nis",
  address="Nis, Serbia & Montenegro",
  isbn="0-7803-8166-1"
}