Publication detail

RTS Noise in MOSFETs: Mean Capture Time and Trap Position

PAVELKA, J. ŠIKULA, J. CHVÁTAL, M. TACANO, M.

Original Title

RTS Noise in MOSFETs: Mean Capture Time and Trap Position

Type

conference paper

Language

English

Original Abstract

RTS noise in MOSFETs is given by drain current fluctuation due to charge carrier capture and emission by a single active trap. From the drain voltage dependence of the ratio of capture tauC and emission tauE times the longitudinal trap position in the channel can be calculated. According to the Shockley-Read-Hall statistic, tauC is inversely proportional to the concentration of charge carriers n and in most noise papers, drain current ID is commonly supposed to be proportional to n and used to express concentration. Then we should expect tauC to decrease with increasing current, however, opposite dependence is usually experimentally found. In order to explain this discrepancy, we present a model of non-uniform charge carrier density distribution in channel with concentration decreasing towards the drain electrode.

Keywords

MOSFET; RTS noise; trap

Authors

PAVELKA, J.; ŠIKULA, J.; CHVÁTAL, M.; TACANO, M.

RIV year

2015

Released

9. 10. 2015

Publisher

IEEE

ISBN

978-1-4673-8335-6

Book

Noise and Fluctuations (ICNF)

Pages from

1

Pages to

4

Pages count

4

URL

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288619

BibTex

@inproceedings{BUT120493,
  author="Jan {Pavelka} and Josef {Šikula} and Miloš {Chvátal} and Munecazu {Tacano}",
  title="RTS Noise in MOSFETs: Mean Capture Time and Trap Position
",
  booktitle="Noise and Fluctuations (ICNF)",
  year="2015",
  pages="1--4",
  publisher="IEEE",
  doi="10.1109/ICNF.2015.7288619",
  isbn="978-1-4673-8335-6",
  url="http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288619"
}