Publication detail

Using RADFETs for alpha radiation dosimetry

SHARP, R. HOFMAN, J. HOLMES-SIEDLE, A.

Original Title

Using RADFETs for alpha radiation dosimetry

Type

conference paper

Language

English

Original Abstract

The effects of alpha irradiation on the change in threshold voltage have been measured for standard RADFET die housed in a custom package. The intended application is for monitoring process stability in an ion implantation process. The results show that these devices exhibit good promise for use as a routine dosimeter for periodic comparison of the stability of the process.

Keywords

alpha radiation, RADFET, threshold voltage, ion implantation, power semiconductors

Authors

SHARP, R.; HOFMAN, J.; HOLMES-SIEDLE, A.

RIV year

2011

Released

16. 9. 2011

Publisher

IEEE

Location

Sevilla, Spain

ISBN

9781457705854

Book

Proceedings, 12th European Conference on Radiation and its Effects on Components and Systems (RADECS 2011) : Sevilla, Spain, September 19-23, 2011

Pages from

1

Pages to

4

Pages count

4

BibTex

@inproceedings{BUT114091,
  author="Richard {Sharp} and Jiří {Hofman} and Andrew {Holmes-Siedle}",
  title="Using RADFETs for alpha radiation dosimetry",
  booktitle="Proceedings, 12th European Conference on Radiation and its Effects on Components and Systems (RADECS 2011) : Sevilla, Spain, September 19-23, 2011",
  year="2011",
  pages="1--4",
  publisher="IEEE",
  address="Sevilla, Spain",
  isbn="9781457705854"
}