Publication detail

Optimization of ion-atomic beam source for deposition of GaN ultrathin films

MACH, J. ŠAMOŘIL, T. KOLÍBAL, M. ZLÁMAL, J. VOBORNÝ, S. BARTOŠÍK, M. ŠIKOLA, T.

Original Title

Optimization of ion-atomic beam source for deposition of GaN ultrathin films

Type

journal article in Web of Science

Language

English

Original Abstract

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j 1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Keywords

Ion souce; Atomic source; GaN; Surfaces

Authors

MACH, J.; ŠAMOŘIL, T.; KOLÍBAL, M.; ZLÁMAL, J.; VOBORNÝ, S.; BARTOŠÍK, M.; ŠIKOLA, T.

RIV year

2014

Released

15. 8. 2014

ISBN

0034-6748

Periodical

Review of Scientific Instruments

Year of study

85

Number

8

State

United States of America

Pages from

083302-1

Pages to

083302-5

Pages count

5