Publication detail

Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique

KHATEB, F. KHATIB, N. PROMMEE, P. JAIKLA, W. FUJCIK, L.

Original Title

Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique

English Title

Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique

Type

journal article in Web of Science

Language

en

Original Abstract

This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit.

English abstract

This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit.

Keywords

Floating-gate MOST; quasi-floating-gate MOST, bulk-driven MOST; transconductor.

RIV year

2013

Released

02.09.2013

Location

Singapore

Pages from

1350073-1

Pages to

1350073-13

Pages count

13

URL

BibTex


@article{BUT100705,
  author="Fabian {Khateb} and Nabhan {Khatib} and Pipat {Prommee} and Winai {Jaikla} and Lukáš {Fujcik}",
  title="Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique",
  annote="This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit.",
  chapter="100705",
  doi="10.1142/S0218126613500734",
  number="8, IF: 0.238",
  volume="2013 (22)",
  year="2013",
  month="september",
  pages="1350073-1--1350073-13",
  type="journal article in Web of Science"
}