Publication detail

Metal-Semiconductor Junction Role in CdTe Detectors

GRMELA, L. ŠIK, O.

Original Title

Metal-Semiconductor Junction Role in CdTe Detectors

Type

journal article in Web of Science

Language

English

Original Abstract

We have performed noise spectroscopy and charge transport properties analysis of CdTe detectors. Two types of high volume detectors are compared: Low ohmic (based on low resistivity crystal material 70 Ohm cm) and semi-insulating ( 10^8 Ohmcm).The theoretical fundaments of contacts role in detector system are given. We observed high asymmetry of IV characteristics of the lowohmic sample between normal and reverse bias, showing improper quality of contacts preparation, caused by higher concentration of impurities in metal-semiconductor area. This finding is supported by the fact that the low frequency noise spectral density is proportional to applied voltage with exponent 2.7, which is higher than the theoretical value 2.The semi-insulating sample very good contact rectification effect symmetry and less additive noise to the detector system.

Keywords

CdTe, transport characteristics, noise, contact quality

Authors

GRMELA, L.; ŠIK, O.

RIV year

2013

Released

12. 6. 2013

Publisher

Versita Publishing

Location

Warsaw, Poland

ISBN

1335-8243

Periodical

Acta Electrotechnica et Informatica

Year of study

13

Number

1

State

Slovak Republic

Pages from

22

Pages to

25

Pages count

4

URL

http://www.degruyter.com/view/j/aeei.2013.13.issue-1/aeei-2013-0004/aeei-2013-0004.xml?format=INT

BibTex

@article{BUT100283,
  author="Lubomír {Grmela} and Ondřej {Šik}",
  title="Metal-Semiconductor Junction Role in CdTe Detectors",
  journal="Acta Electrotechnica et Informatica",
  year="2013",
  volume="13",
  number="1",
  pages="22--25",
  doi="10.2478/aeei-2013-0004",
  issn="1335-8243",
  url="http://www.degruyter.com/view/j/aeei.2013.13.issue-1/aeei-2013-0004/aeei-2013-0004.xml?format=INT"
}