Project detail

Formation and resistive switching properties of nanostructured HfO2/Al2O3 composite films

Duration: 01.03.2020 — 28.02.2021

On the project

The project is aimed at achieving and investigating redox-based resistive switching phenomena in nanostructured HfO2/Al2O3 composite films fabricated via the PAA-assisted anodization technique. Various nanostructured HfO2/Al2O3 composite films are produced via electrochemical oxidation of Al/Hf thin films sputter-deposited on Si wafer. Electrodes are deposited on top of fabricated composite films and metal/oxide/metal structures are created. Resistive switching behavior of nanostructured HfO2/Al2O3 composite film in metal/oxide/metal structures is investigated via electronic measurements.

Mark

CEITEC VUT-J-20-6513

Default language

Czech

People responsible

Mozalev Alexander, Dr. - fellow researcher
Kamnev Kirill - principal person responsible

Units

Smart Nanodevices
- (2020-01-01 - 2020-12-31)
Central European Institute of Technology BUT
- (2020-01-01 - 2020-12-31)

Funding resources

Brno University of Technology - Vnitřní projekty VUT

- whole funder (2020-01-01 - 2021-12-31)