Czech

3

Not applicable.

The knowledge about electronic devices and skills in practical use of electronic devices.

The subject knowledge on the secondary school level is required.

Not applicable.

Lectures, numerical practical classes, laboratory practical classes.Teaching methods depend on the type of course unit as specified in Article 7 of BUT Rules for Studies and Examinations.

Laboratory practicum - 30 points; minimum 20 points.
Final exam - 70 points; minimum 30 points.

Conductors, semiconductors, insulators. Semiconductors physics. Band diagrams of semiconductors. Intrinsic, p-type, n-type semiconductors, donors, acceptors, electrons and holes. Concentration of carriers in semiconductors. Electrical conductivity of semiconductors, drift current, diffusion current, Generation and recombination of carriers in semiconductors.
Junctions. PN-junction. PN-junction in steady state, depletion layer, built-in voltage. Barrier and diffusion capacitance of PN junction. Band diagram without external voltage and for forward and reverse biased junction . Current-voltage characteristics. Breakdown of PN junction.
Semiconductor Diode. Current-voltage characteristics. Diode as rectifier, reference voltage source, Differential resistance of forward biased diode, diode as voltage controlled resistance and switcher.
Semiconductor Diode. Special types of diode: varicap, varactor, tunnel diode, Schottky diode. Fotodiode. Structure PIN, PIN-diode.
Semiconductor Diode. Technology of semiconductor diode. Typical cuircuits using semiconductor diode. Typical parameters of semiconuctor diodes.
Bipolar junction transistors (BJT). Structure and principle of operation (transistor effect). Current-voltage characteristics of common emitter configuration. Operation modes (active normal, active inverse, saturation, closed).
Bipolar junction transistors (BJT):Linearized small-signal models of bipolar transistors, h-parameters, y-parameters. The first and the second breakdown of the transistor, breakdown characteristics. The limits of transitor operation (safe operating area).
Bipolar junction transistors (BJT):Simple circuits with transistors. DC properties (operating point). Transistor as an amplifier in CE, CB configuration, emitter follower, current transfer, voltage transfer, input and output impedance. Transistor as a switch.
Field effect transistors: JFET, MOSFET. Types of transistors: n-channel, p-channel, enhancement type, depletion type. Structure, principle of operation. Linear regime and saturation. Current-voltage characteristics. Transistor as a current source, voltage amplifier, switch and controlled resistance.
Field effect transistors. Linearized small signal low-frequency model. Structure CMOS. Field effect transistor as a memory element. Structure CCD.
Power electronic devices. Silicon-controlled rectifier (SCR, thyristor): structure, equivalent circuit, principle of operation (the thyristor effect), current-voltage characteristics (forward blocking region, forward conduction region, reverse blocking region, reverse avalanche region, forward blocking voltage, holding current). Related devices.
Optoelectronic devices Materials for light detectors, absorption of light, penetration depth. Photoresistor, photoconductivity. Phototransistor. Light emitting diode. Semiconductor laser. Solar cells.

Not applicable.

Introduce students to electronic devices and their applications and to the basic terminology in English as well as Czech.

Laboratory practical classes. Numerical practical classes.

Not applicable.

Not applicable.

BOUŠEK, J. - MUSIL, V. - MASCHKE, J.: Elektronické součástky. VUT, Brno, 2009 (CS)
BOUŠEK, J. - MUSIL, V. - MASCHKE, J.: Elektronic devices. VUT, Brno, 2010 (CS)
Electronic devices and circuit theory. Prentice Hall, 10. vyd., 2008, ISBN-13: 978-0135026496 (EN)
Lab manual for electronic devices and circuit theory. Prentice Hall, 10. vyd., 2008, ISBN 978-0135046852 (EN)
BUCHLA, D.M.: Lab manual (MultiSIM emphasis) for electronic devices and circuit theory. Prentice Hall, 9. vyd., 2005, ISBN 978-0131720886 (EN)

Not applicable.

13 hours, compulsory